- Title
- Tuning photoresponse of graphene-black phosphorus heterostructure by electrostatic gating and photo-induced doping
- Creator
- Liu, Yanpeng; Yang, Ming; Eda, Goki; Wang, Shijie; Yi, Jiabao; Vinu, Ajayan; Loh, Kian Ping; Lu, Junpeng; Liu, Ying; Liu, Hongwei; Zhang, Erwen; Fu, Wei; Wang, Junyong; Hu, Zhenliang; Yin, Jun
- Relation
- ARC.DE200101622 http://purl.org/au-research/grants/arc/DE200101622
- Relation
- Chinese Chemical Letters Vol. 33, Issue 1, p. 368-373
- Publisher Link
- http://dx.doi.org/10.1016/j.cclet.2021.06.079
- Publisher
- Elsevier
- Resource Type
- journal article
- Date
- 2022
- Description
- Metal-semiconductor diodes constructed from two-dimensional (2D) van der Waals heterostructures show excellent gate electrostatics and a large built-in electric field at the tunnel junction, which can be exploited to make highly sensitive photodetector. Here we demonstrate a metal-semiconductor photodiode constructed by the monolayer graphene (Gr) on a few-layer black phosphorus (BP). Due to the presence of a built-in potential barrier (~0.09 ± 0.03 eV) at the Gr-BP interface, the photoresponsivity of the Gr-BP device is enhanced by a factor of 672%, and the external quantum efficiency (EQE) increases to 648% from 84% of the bare BP. Electrostatic gating allows the BP channel to be switched between p-type and n-type conduction. We further demonstrate that excitation laser power can be used to control the current polarity of the Gr-BP device due to photon-induced doping. The versatility of the Gr-BP junctions in terms of electrostatic bias-induced or light-induced switching of current polarity is potentially useful for making dynamically reconfigurable digital circuits.
- Subject
- black phosphorous; graphene; heterostructure; gate-tunable; photodetector; photoinverter
- Identifier
- http://hdl.handle.net/1959.13/1453984
- Identifier
- uon:44788
- Identifier
- ISSN:1001-8417
- Language
- eng
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